FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
55 V
Current - Continuous Drain (Id) @ 25℃
47A (Tc)
51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
4.5V, 10V
Rds On (Max) @ Id, Vgs
22mOhm @ 25A, 10V
13.5mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 5 V
36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 25 V
1620 pF @ 25 V
Power Dissipation (Max)
3.8W (Ta), 110W (Tc)
80W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-262
TO-220AB
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-220-3
