FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
55 V
Current - Continuous Drain (Id) @ 25℃
17A (Tc)
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
4V, 10V
Rds On (Max) @ Id, Vgs
100mOhm @ 10A, 5V
40mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 5 V
25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 25 V
880 pF @ 25 V
Power Dissipation (Max)
3.7W (Ta), 60W (Tc)
68W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Surface Mount
Through Hole
Supplier Device Package
D2PAK (TO-263)
I-PAK
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-251-3 Short Leads, IPak, TO-251AA
