FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
55 V
Current - Continuous Drain (Id) @ 25℃
10A (Tc)
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
4V, 10V
Rds On (Max) @ Id, Vgs
200mOhm @ 6A, 5V
60mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
8.4 nC @ 5 V
15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V
480 pF @ 25 V
Power Dissipation (Max)
43W (Tc)
3.8W (Ta), 45W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-220AB
TO-262
Package / Case
TO-220-3
TO-262-3 Long Leads, I2Pak, TO-262AA
