Packaging
Bulk or Tube
Tube
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
60 V
Current - Continuous Drain (Id) @ 25℃
161A (Tc)
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
4V, 5V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 15A, 10V
100mOhm @ 10A, 5V
Vgs(th) (Max) @ Id
2.3V @ 250μA
2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 4.5 V
18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
4380 pF @ 15 V
870 pF @ 25 V
Power Dissipation (Max)
140W (Tc)
3.7W (Ta), 60W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
IPAK (TO-251AA)
TO-262-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
TO-262-3 Long Leads, I2Pak, TO-262AA
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