FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
100 V
Current - Continuous Drain (Id) @ 25℃
10A (Tc)
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
5V
Rds On (Max) @ Id, Vgs
185mOhm @ 6A, 10V
58mOhm @ 8.5A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 5 V
54 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 25 V
1580 pF @ 25 V
Power Dissipation (Max)
48W (Tc)
44W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
IPAK (TO-251AA)
TO-220F-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
TO-220-3 Full Pack
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