FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
200 V
Current - Continuous Drain (Id) @ 25℃
4.3A (Tc)
6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
5V
Rds On (Max) @ Id, Vgs
540mOhm @ 2.6A, 5V
400mOhm @ 3.25A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
6.1 nC @ 5 V
27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
755 pF @ 25 V
Power Dissipation (Max)
2.5W (Ta), 25W (Tc)
36W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-251AA
TO-220-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
TO-220-3
