Packaging
Tube
Cut Tape (CT)
FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
20 V
Current - Continuous Drain (Id) @ 25℃
4.3A (Tc)
2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
-
Rds On (Max) @ Id, Vgs
540mOhm @ 2.6A, 5V
200mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id
2V @ 250μA
700mV @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs
6.1 nC @ 5 V
8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
210 pF @ 15 V
Power Dissipation (Max)
2.5W (Ta), 25W (Tc)
-
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-
Mounting Type
Through Hole
Surface Mount
Supplier Device Package
TO-251AA
Micro6?(SOT23-6)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
SOT-23-6
