FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
60 V
Current - Continuous Drain (Id) @ 25℃
17A (Tc)
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
4V, 5V
Rds On (Max) @ Id, Vgs
65mOhm @ 10A, 10V
28mOhm @ 31A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 5 V
66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
480 pF @ 25 V
3300 pF @ 25 V
Power Dissipation (Max)
45W (Tc)
150W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
IPAK (TO-251AA)
TO-220AB
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
TO-220-3
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