Packaging
Tube
Cut Tape (CT)
FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
30 V
Current - Continuous Drain (Id) @ 25℃
10A (Tc)
2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
140mOhm @ 6A, 10V
200mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
7.9 nC @ 5 V
11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
265 pF @ 25 V
170 pF @ 25 V
Power Dissipation (Max)
28W (Tc)
-
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-
Mounting Type
Through Hole
Surface Mount
Supplier Device Package
I-PAK
Micro6?(SOT23-6)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
SOT-23-6
