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Transistors - FETs, MOSFETs - Single
/ Infineon Technologies IRFZ48NLPBF
IRFZ48NLPBF
Obsolete
Transistors - FETs, MOSFETs - Single
Description:
MOSFET N-CH 55V 64A TO262
Manufacturer:
Infineon Technologies
Datasheet:
IRFZ48NLPBF Datasheet
History Price: Obsolete
In Stock: 14000
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Specification
PDF Datasheet
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IRFZ48NLPBF vs IRFU9220
Mfr Part
IRFZ48NLPBF
IRFU9220
Category
Transistors - FETs, MOSFETs - Single
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Harris Corporation
Series
HEXFET
-
Packaging
Tube
Tube
Status
Obsolete
Obsolete
FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
200 V
Current - Continuous Drain (Id) @ 25℃
64A (Tc)
3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
14mOhm @ 32A, 10V
1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
81 nC @ 10 V
20 nC @ 10 V
Vgs (Max)
?0V
?0V
Input Capacitance (Ciss) (Max) @ Vds
1970 pF @ 25 V
340 pF @ 25 V
FET Feature
-
-
Power Dissipation (Max)
3.8W (Ta), 130W (Tc)
2.5W (Ta), 42W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-262
TO-251AA
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-251-3 Short Leads, IPak, TO-251AA
