FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
250 V
Current - Continuous Drain (Id) @ 25℃
64A (Tc)
2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
14mOhm @ 32A, 10V
3Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
81 nC @ 10 V
14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1970 pF @ 25 V
220 pF @ 25 V
Power Dissipation (Max)
3.8W (Ta), 130W (Tc)
50W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-262
TO-251AA
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-251-3 Short Leads, IPak, TO-251AA
