Status
Discontinued
Active
FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
60 V
Current - Continuous Drain (Id) @ 25℃
51A (Tc)
5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
13.9mOhm @ 31A, 10V
500mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1420 pF @ 25 V
270 pF @ 25 V
Power Dissipation (Max)
80W (Tc)
2.5W (Ta), 25W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Through Hole
Supplier Device Package
D2PAK
TO-251AA
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-251-3 Short Leads, IPak, TO-251AA
