FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
55 V
Current - Continuous Drain (Id) @ 25℃
30A (Tc)
64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
50mOhm @ 18A, 10V
14mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
1970 pF @ 25 V
Power Dissipation (Max)
3.7W (Ta), 88W (Tc)
3.8W (Ta), 130W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Surface Mount
Through Hole
Supplier Device Package
D2PAK (TO-263)
TO-262
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-262-3 Long Leads, I2Pak, TO-262AA
