FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
60 V
Current - Continuous Drain (Id) @ 25℃
30A (Tc)
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
50mOhm @ 16A, 10V
18mOhm @ 43A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 25 V
2400 pF @ 25 V
Power Dissipation (Max)
74W (Tc)
3.7W (Ta), 190W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-220AB
TO-262-3
Package / Case
TO-220-3
TO-262-3 Long Leads, I2Pak, TO-262AA
