FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
100 V
Current - Continuous Drain (Id) @ 25℃
30A (Tc)
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
50mOhm @ 16A, 10V
1.2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 25 V
200 pF @ 25 V
Power Dissipation (Max)
74W (Tc)
2.5W (Ta), 25W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-220AB
TO-251AA
Package / Case
TO-220-3
TO-251-3 Short Leads, IPak, TO-251AA
