FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
55 V
Current - Continuous Drain (Id) @ 25℃
17A (Tc)
51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
70mOhm @ 10A, 10V
13.6mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
370 pF @ 25 V
1460 pF @ 25 V
Power Dissipation (Max)
45W (Tc)
82W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-220AB
TO-262
Package / Case
TO-220-3
TO-262-3 Long Leads, I2Pak, TO-262AA
