Status
Obsolete
Not For New Designs
FET Type
P-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
55 V
Current - Continuous Drain (Id) @ 25℃
1.9A (Tc)
51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1.1A, 10V
13.9mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
8.9 nC @ 10 V
43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 25 V
1420 pF @ 25 V
Power Dissipation (Max)
2.5W (Ta), 25W (Tc)
80W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-251AA
TO-262
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
TO-262-3 Long Leads, I2Pak, TO-262AA
