Series
HEXFET, StrongIRFET
-
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
600 V
Current - Continuous Drain (Id) @ 25℃
87A (Tc)
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
10V
Rds On (Max) @ Id, Vgs
7.2mOhm @ 52A, 10V
4.4Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
3.7V @ 100μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
126 nC @ 10 V
18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4430 pF @ 25 V
350 pF @ 25 V
Power Dissipation (Max)
140W (Tc)
2.5W (Ta), 42W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
IPAK (TO-251AA)
TO-251AA
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
TO-251-3 Short Leads, IPak, TO-251AA
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