FET Type
-
N and P-Channel
FET Feature
-
Logic Level Gate
Drain to Source Voltage (Vdss)
-
30V
Current - Continuous Drain (Id) @ 25℃
-
3.5A, 2.3A
Rds On (Max) @ Id, Vgs
-
100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
-
1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
-
14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
190pF @ 15V
Operating Temperature
-
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
-
Surface Mount
Package / Case
-
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
-
8-SO
