FET Type
-
2 N-Channel (Dual)
FET Feature
-
Logic Level Gate
Drain to Source Voltage (Vdss)
-
30V
Current - Continuous Drain (Id) @ 25℃
-
7.8A, 8.9A
Rds On (Max) @ Id, Vgs
-
21.8mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
-
2.25V @ 25μA
Gate Charge (Qg) (Max) @ Vgs
-
6.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
600pF @ 15V
Operating Temperature
-
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
-
Surface Mount
Package / Case
-
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
-
8-SO
