IRFHM8363TR2PBF
IRFHM8363TR2PBF
Obsolete
Description:  MOSFET 2N-CH 30V 11A 8PQFN
Manufacturer:  Infineon Technologies
History Price: Obsolete
In Stock: 19000
IRFHM8363TR2PBF vs IRFH4255DTRPBF
Series
-
HEXFET
Packaging
Cut Tape (CT)
Tape & Reel (TR)
Status
Obsolete
Obsolete
FET Type
2 N-Channel (Dual)
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
25V
Current - Continuous Drain (Id) @ 25℃
11A
64A, 105A
Rds On (Max) @ Id, Vgs
14.9mOhm @ 10A, 10V
3.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25μA
2.1V @ 35μA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1165pF @ 10V
1314pF @ 13V
Power - Max
2.7W
31W, 38W
Operating Temperature
-
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Package / Case
8-PowerVDFN
8-PowerVDFN
Supplier Device Package
8-PQFN-Dual (3.3x3.3)
PQFN (5x6)