IRFHM8363TR2PBF
IRFHM8363TR2PBF
Obsolete
Description:  MOSFET 2N-CH 30V 11A 8PQFN
Manufacturer:  Infineon Technologies
History Price: Obsolete
In Stock: 19000
IRFHM8363TR2PBF vs IRF5810TR
Series
-
HEXFET
Packaging
Cut Tape (CT)
Tape & Reel (TR)
Status
Obsolete
Obsolete
FET Type
2 N-Channel (Dual)
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
20V
Current - Continuous Drain (Id) @ 25℃
11A
2.9A
Rds On (Max) @ Id, Vgs
14.9mOhm @ 10A, 10V
90mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id
2.35V @ 25μA
1.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1165pF @ 10V
650pF @ 16V
Power - Max
2.7W
960mW
Operating Temperature
-
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Package / Case
8-PowerVDFN
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
8-PQFN-Dual (3.3x3.3)
6-TSOP