FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
50 V
Current - Continuous Drain (Id) @ 25℃
104A (Tc)
9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 62A, 10V
280mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5270 pF @ 50 V
490 pF @ 25 V
Power Dissipation (Max)
380W (Tc)
42W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-220AB
TO-251AA
Package / Case
TO-220-3
TO-251-3 Short Leads, IPak, TO-251AA
