IRFAE42
IRFAE42
Active
Description:  N-CHANNEL HERMETIC MOS HEXFET
Manufacturer:  International Rectifier
Datasheet:   IRFAE42 Datasheet
History Price: Active
In Stock: 28000
IRFAE42 vs IRFZ48STRLPBF
Series
-
-
Packaging
Bulk
Tape & Reel (TR)
Status
Active
Active
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
60 V
Current - Continuous Drain (Id) @ 25℃
4.4A
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
10V
Rds On (Max) @ Id, Vgs
-
18mOhm @ 43A, 10V
Vgs(th) (Max) @ Id
-
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
-
110 nC @ 10 V
Vgs (Max)
-
?0V
Input Capacitance (Ciss) (Max) @ Vds
-
2400 pF @ 25 V
FET Feature
-
-
Power Dissipation (Max)
125W
3.7W (Ta), 190W (Tc)
Operating Temperature
-
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Surface Mount
Supplier Device Package
TO-204AA (TO-3)
D2PAK (TO-263)
Package / Case
TO-204AA, TO-3
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB