FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
55 V
Current - Continuous Drain (Id) @ 25℃
4.4A
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
10V
Rds On (Max) @ Id, Vgs
-
175mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
-
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
-
19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
-
350 pF @ 25 V
Power Dissipation (Max)
125W
38W (Tc)
Operating Temperature
-
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-204AA (TO-3)
IPAK (TO-251AA)
Package / Case
TO-204AA, TO-3
TO-251-3 Short Leads, IPak, TO-251AA
