Status
Discontinued
Active
FET Type
2 N-Channel (Dual)
-
FET Feature
Logic Level Gate
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Drain to Source Voltage (Vdss)
80V
-
Current - Continuous Drain (Id) @ 25℃
3.6A
-
Rds On (Max) @ Id, Vgs
73mOhm @ 2.2A, 10V
-
Vgs(th) (Max) @ Id
4V @ 250μA
-
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
-
Input Capacitance (Ciss) (Max) @ Vds
660pF @ 25V
-
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-
Mounting Type
Surface Mount
-
Package / Case
8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package
8-SO
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