FET Type
N and P-Channel
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Drain to Source Voltage (Vdss)
30V
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Current - Continuous Drain (Id) @ 25℃
5.8A, 4.3A
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Rds On (Max) @ Id, Vgs
45mOhm @ 5.8A, 10V
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Vgs(th) (Max) @ Id
1V @ 250μA
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Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds
520pF @ 25V
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Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
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Mounting Type
Surface Mount
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Package / Case
8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package
8-SO
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