IRF7379PBF
IRF7379PBF
Obsolete
Description:  MOSFET N/P-CH 30V 8-SOIC
Manufacturer:  Infineon Technologies
Datasheet:   IRF7379PBF Datasheet
History Price: Obsolete
In Stock: 17000
IRF7379PBF vs IRF9952
Mfr Part
Series
HEXFET
HEXFET
Packaging
Tube
Tube
Status
Obsolete
Obsolete
FET Type
N and P-Channel
N and P-Channel
FET Feature
Standard
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
30V
Current - Continuous Drain (Id) @ 25℃
5.8A, 4.3A
3.5A, 2.3A
Rds On (Max) @ Id, Vgs
45mOhm @ 5.8A, 10V
100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
520pF @ 25V
190pF @ 15V
Power - Max
2.5W
2W
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
8-SO