IRF640NSTRRPBF
IRF640NSTRRPBF
Not For New Designs
Description:  MOSFET N-CH 200V 18A D2PAK
Manufacturer:  Infineon Technologies
History Price: $1.10460
In Stock: 40000
IRF640NSTRRPBF vs IRFZ48NPBF
Series
HEXFET
HEXFET
Packaging
Tape & Reel (TR)
Tube
Status
Not For New Designs
Active
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
55 V
Current - Continuous Drain (Id) @ 25℃
18A (Tc)
64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
150mOhm @ 11A, 10V
14mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V
81 nC @ 10 V
Vgs (Max)
?0V
?0V
Input Capacitance (Ciss) (Max) @ Vds
1160 pF @ 25 V
1970 pF @ 25 V
FET Feature
-
-
Power Dissipation (Max)
150W (Tc)
130W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Surface Mount
Through Hole
Supplier Device Package
D2PAK
TO-220AB
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-220-3