FET Type
N and P-Channel
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FET Feature
Logic Level Gate
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Drain to Source Voltage (Vdss)
20V
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Current - Continuous Drain (Id) @ 25℃
2.7A, 2.2A
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Rds On (Max) @ Id, Vgs
90mOhm @ 2.7A, 4.5V
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Vgs(th) (Max) @ Id
1.25V @ 250μA
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Gate Charge (Qg) (Max) @ Vgs
6nC @ 4.5V
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Input Capacitance (Ciss) (Max) @ Vds
400pF @ 15V
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Operating Temperature
-
-
Mounting Type
Surface Mount
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Package / Case
SOT-23-6 Thin, TSOT-23-6
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Supplier Device Package
6-TSOP
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