FET Type
N and P-Channel
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
30V
Current - Continuous Drain (Id) @ 25℃
2.7A, 2.2A
6.4A, 9.7A
Rds On (Max) @ Id, Vgs
90mOhm @ 2.7A, 4.5V
22.6mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id
1.25V @ 250μA
2.25V @ 25μA
Gate Charge (Qg) (Max) @ Vgs
6nC @ 4.5V
6.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
400pF @ 15V
580pF @ 15V
Power - Max
960mW
1.4W, 2W
Operating Temperature
-
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
6-TSOP
8-SO
