IRF100B201
IRF100B201
Active
Description:  MOSFET N-CH 100V 192A TO220AB
Manufacturer:  Infineon Technologies
Datasheet:   IRF100B201 Datasheet
History Price: $3.39000
In Stock: 8000
IRF100B201 vs IRFZ46NSTRLPBF
Series
HEXFET, StrongIRFET
HEXFET
Packaging
Bulk or Tube
Tape & Reel (TR)
Status
Active
Active
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
55 V
Current - Continuous Drain (Id) @ 25℃
192A (Tc)
53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 115A, 10V
16.5mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
255 nC @ 10 V
72 nC @ 10 V
Vgs (Max)
?0V
?0V
Input Capacitance (Ciss) (Max) @ Vds
9500 pF @ 50 V
1696 pF @ 25 V
FET Feature
-
-
Power Dissipation (Max)
441W (Tc)
3.8W (Ta), 107W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Surface Mount
Supplier Device Package
TO-220AB
D2PAK
Package / Case
TO-220-3
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB