HERF1007GAH
HERF1007GAH
Active
Description:  DIODE GEN PURP 800V 10A ITO220AB
Manufacturer:  Taiwan Semiconductor
Datasheet:   HERF1007GAH Datasheet
History Price: $1.38000
In Stock: 38000
HERF1007GAH vs HERAF804G
Series
Automotive, AEC-Q101
-
Packaging
Tube
Tube
Status
Active
Active
Diode Type
Standard
Standard
Voltage - DC Reverse (Vr) (Max)
800 V
300 V
Current - Average Rectified (Io)
10A
8A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 5 A
1 V @ 8 A
Speed
Fast Recovery = 200mA (Io)
Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr)
80 ns
50 ns
Current - Reverse Leakage @ Vr
10 μA @ 800 V
10 μA @ 300 V
Capacitance @ Vr, F
40pF @ 4V, 1MHz
80pF @ 4V, 1MHz
Mounting Type
Through Hole
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
TO-220-2 Full Pack
Supplier Device Package
ITO-220AB
ITO-220AC
Operating Temperature - Junction
-55 ℃ ~ 150 ℃
-55 ℃ ~ 150 ℃