HERAF1006G
HERAF1006G
Active
Description:  DIODE GEN PURP 600V 10A ITO220AC
Manufacturer:  Taiwan Semiconductor
Datasheet:   HERAF1006G Datasheet
History Price: Active
In Stock: 46000
HERAF1006G vs HERAF808G
Series
-
-
Packaging
Tube
Tube
Status
Active
Active
Diode Type
Standard
Standard
Voltage - DC Reverse (Vr) (Max)
600 V
1000 V
Current - Average Rectified (Io)
10A
8A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
1.7 V @ 8 A
Speed
Fast Recovery = 200mA (Io)
Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr)
80 ns
80 ns
Current - Reverse Leakage @ Vr
10 μA @ 600 V
10 μA @ 1000 V
Capacitance @ Vr, F
60pF @ 4V, 1MHz
60pF @ 4V, 1MHz
Mounting Type
Through Hole
Through Hole
Package / Case
TO-220-2 Full Pack
TO-220-2 Full Pack
Supplier Device Package
ITO-220AC
ITO-220AC
Operating Temperature - Junction
-55 ℃ ~ 150 ℃
-55 ℃ ~ 150 ℃