CSD25303W1015
CSD25303W1015
Obsolete
Description:  MOSFET P-CH 20V 3A 6DSBGA
Manufacturer:  Texas Instruments
History Price: $0.28000
In Stock: 23000
CSD25303W1015 vs CSD19536KTTT
Series
NexFET
NexFET
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Obsolete
Active
FET Type
P-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
100 V
Current - Continuous Drain (Id) @ 25℃
3A (Tc)
200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
6V, 10V
Rds On (Max) @ Id, Vgs
58mOhm @ 1.5A, 4.5V
2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
3.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
4.3 nC @ 4.5 V
153 nC @ 10 V
Vgs (Max)
?V
?0V
Input Capacitance (Ciss) (Max) @ Vds
435 pF @ 10 V
12000 pF @ 50 V
FET Feature
-
-
Power Dissipation (Max)
1.5W (Ta)
375W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
6-DSBGA (1x1.5)
DDPAK/TO-263-3
Package / Case
6-UFBGA, DSBGA
TO-263-4, D2Pak (3 Leads + Tab), TO-263AA