CSD25211W1015
CSD25211W1015
Active
Description:  MOSFET P-CH 20V 3.2A 6DSBGA
Manufacturer:  Texas Instruments
History Price: $0.66000
In Stock: 5000
CSD25211W1015 vs CSD18540Q5BT
Series
NexFET
NexFET
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
P-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
60 V
Current - Continuous Drain (Id) @ 25℃
3.2A (Ta)
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
4.5V, 10V
Rds On (Max) @ Id, Vgs
33mOhm @ 1.5A, 4.5V
2.2mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
1.1V @ 250μA
2.3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
4.1 nC @ 4.5 V
53 nC @ 10 V
Vgs (Max)
-6V
?0V
Input Capacitance (Ciss) (Max) @ Vds
570 pF @ 10 V
4230 pF @ 30 V
FET Feature
-
-
Power Dissipation (Max)
1W (Ta)
3.1W (Ta), 195W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
6-DSBGA (1x1.5)
8-VSON-CLIP (5x6)
Package / Case
6-UFBGA, DSBGA
8-PowerTDFN