CSD19537Q3
CSD19537Q3
Active
Description:  MOSFET N-CH 100V 9.7A/50A 8VSON
Manufacturer:  Texas Instruments
Datasheet:   CSD19537Q3 Datasheet
History Price: $1.40000
In Stock: 32800
CSD19537Q3 vs CSD19506KTTT
Series
NexFET
NexFET
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
80 V
Current - Continuous Drain (Id) @ 25℃
50A (Ta)
200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
6V, 10V
Rds On (Max) @ Id, Vgs
14.5mOhm @ 10A, 10V
2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.6V @ 250μA
3.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
156 nC @ 10 V
Vgs (Max)
?0V
?0V
Input Capacitance (Ciss) (Max) @ Vds
1680 pF @ 50 V
12200 pF @ 40 V
FET Feature
-
-
Power Dissipation (Max)
2.8W (Ta), 83W (Tc)
375W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
8-VSON (3.3x3.3)
DDPAK/TO-263-3
Package / Case
8-PowerVDFN
TO-263-4, D2Pak (3 Leads + Tab), TO-263AA