CSD19531KCS
CSD19531KCS
Active
Description:  MOSFET N-CH 100V 100A TO220-3
Manufacturer:  Texas Instruments
Datasheet:   CSD19531KCS Datasheet
History Price: $2.23000
In Stock: 12850
CSD19531KCS vs CSD23202W10
Series
NexFET
NexFET
Packaging
Bulk or Tube
Tape & Reel (TR)
Status
Active
Active
FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
12 V
Current - Continuous Drain (Id) @ 25℃
100A (Ta)
2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
7.7mOhm @ 60A, 10V
53mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
3.3V @ 250μA
900mV @ 250μA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
3.8 nC @ 4.5 V
Vgs (Max)
?0V
-6V
Input Capacitance (Ciss) (Max) @ Vds
3870 pF @ 50 V
512 pF @ 6 V
FET Feature
-
-
Power Dissipation (Max)
214W (Tc)
1W (Ta)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Surface Mount
Supplier Device Package
TO-220-3
4-DSBGA (1x1)
Package / Case
TO-220-3
4-UFBGA, DSBGA