Packaging
Bulk or Tube
Tube
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
40 V
Current - Continuous Drain (Id) @ 25℃
100A (Ta)
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
4.5V, 10V
Rds On (Max) @ Id, Vgs
7.7mOhm @ 60A, 10V
2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.3V @ 250μA
2.1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3870 pF @ 50 V
4680 pF @ 20 V
Power Dissipation (Max)
214W (Tc)
259W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-220-3
TO-220-3
Package / Case
TO-220-3
TO-220-3
