CSD19506KTT
CSD19506KTT
Active
Description:  MOSFET N-CH 80V 200A DDPAK
Manufacturer:  Texas Instruments
Datasheet:   CSD19506KTT Datasheet
History Price: $5.33000
In Stock: 10750
CSD19506KTT vs CSD25304W1015
Series
NexFET
NexFET
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
20 V
Current - Continuous Drain (Id) @ 25℃
200A (Ta)
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 100A, 10V
32.5mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
3.2V @ 250μA
1.15V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
156 nC @ 10 V
4.4 nC @ 4.5 V
Vgs (Max)
?0V
?V
Input Capacitance (Ciss) (Max) @ Vds
12200 pF @ 40 V
595 pF @ 10 V
FET Feature
-
-
Power Dissipation (Max)
375W (Tc)
750mW (Ta)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
DDPAK/TO-263-3
6-DSBGA (1x1.5)
Package / Case
TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
6-UFBGA, DSBGA