FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
80 V
Current - Continuous Drain (Id) @ 25℃
50A (Tc)
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
6V, 10V
Rds On (Max) @ Id, Vgs
14mOhm @ 25A, 10V
9.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250μA
3.4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1480 pF @ 30 V
2730 pF @ 40 V
Power Dissipation (Max)
94W (Tc)
188W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-220-3
TO-220-3
Package / Case
TO-220-3
TO-220-3
