FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
80 V
Current - Continuous Drain (Id) @ 25℃
100A (Tc)
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
6V, 10V
Rds On (Max) @ Id, Vgs
2.9mOhm @ 100A, 10V
2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250μA
3.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 10 V
156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4680 pF @ 20 V
12200 pF @ 40 V
Power Dissipation (Max)
259W (Tc)
375W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-220-3
TO-220-3
Package / Case
TO-220-3
TO-220-3
