CSD17313Q2Q1
CSD17313Q2Q1
Last Time Buy
Description:  MOSFET N-CH 30V 5A 6WSON
Manufacturer:  Texas Instruments
History Price: $0.80000
In Stock: 25300
CSD17313Q2Q1 vs CSD25501F3
Series
Automotive, AEC-Q100, NexFET
FemtoFET
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Last Time Buy
Active
FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
20 V
Current - Continuous Drain (Id) @ 25℃
5A (Tc)
3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
30mOhm @ 4A, 8V
76mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id
1.8V @ 250μA
1.05V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
2.7 nC @ 4.5 V
1.33 nC @ 4.5 V
Vgs (Max)
+10V, -8V
-20V
Input Capacitance (Ciss) (Max) @ Vds
340 pF @ 15 V
385 pF @ 10 V
FET Feature
-
-
Power Dissipation (Max)
2.3W (Ta)
500mW (Ta)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
6-WSON (2x2)
3-LGA (0.73x0.64)
Package / Case
6-WDFN Exposed Pad
3-XFLGA