CSD17309Q3
CSD17309Q3
Active
Description:  MOSFET N-CH 30V 20A/60A 8VSON
Manufacturer:  Texas Instruments
Datasheet:   CSD17309Q3 Datasheet
History Price: $1.19000
In Stock: 20050
CSD17309Q3 vs CSD25484F4
Series
NexFET
FemtoFET
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
20 V
Current - Continuous Drain (Id) @ 25℃
20A (Ta), 60A (Tc)
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V
1.8V, 8V
Rds On (Max) @ Id, Vgs
5.4mOhm @ 18A, 8V
94mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id
1.7V @ 250μA
1.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
1.42 nC @ 4.5 V
Vgs (Max)
+10V, -8V
-12V
Input Capacitance (Ciss) (Max) @ Vds
1440 pF @ 15 V
230 pF @ 10 V
FET Feature
-
-
Power Dissipation (Max)
2.8W (Ta)
500mW (Ta)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
8-VSON-CLIP (3.3x3.3)
3-PICOSTAR
Package / Case
8-PowerTDFN
3-XFDFN