CSD13306WT
CSD13306WT
Active
Description:  MOSFET N-CH 12V 3.5A 6DSBGA
Manufacturer:  Texas Instruments
Datasheet:   CSD13306WT Datasheet
History Price: $1.10000
In Stock: 11250
CSD13306WT vs CSD25484F4T
Series
NexFET
FemtoFET
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
20 V
Current - Continuous Drain (Id) @ 25℃
3.5A (Ta)
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
1.8V, 8V
Rds On (Max) @ Id, Vgs
10.2mOhm @ 1.5A, 4.5V
94mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id
1.3V @ 250μA
1.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
11.2 nC @ 4.5 V
1.42 nC @ 4.5 V
Vgs (Max)
?0V
-12V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 6 V
230 pF @ 10 V
FET Feature
-
-
Power Dissipation (Max)
1.9W (Ta)
500mW (Ta)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
6-DSBGA (1x1.5)
3-PICOSTAR
Package / Case
6-UFBGA, DSBGA
3-XFDFN