CSD13306W
CSD13306W
Active
Description:  MOSFET N-CH 12V 3.5A 6DSBGA
Manufacturer:  Texas Instruments
Datasheet:   CSD13306W Datasheet
History Price: $0.54000
In Stock: 10200
CSD13306W vs CSD25201W15
Series
NexFET
NexFET
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Obsolete
FET Type
N-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
20 V
Current - Continuous Drain (Id) @ 25℃
3.5A (Ta)
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
10.2mOhm @ 1.5A, 4.5V
40mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 250μA
1.1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
11.2 nC @ 4.5 V
5.6 nC @ 4.5 V
Vgs (Max)
?0V
-6V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 6 V
510 pF @ 10 V
FET Feature
-
-
Power Dissipation (Max)
1.9W (Ta)
1.5W (Ta)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
6-DSBGA (1x1.5)
9-DSBGA
Package / Case
6-UFBGA, DSBGA
9-UFBGA, DSBGA