CPH6603-TL-E
CPH6603-TL-E
Active
Description:  P-CHANNEL SILICON MOSFET
Manufacturer:  onsemi
History Price: $0.17000
In Stock: 46550
CPH6603-TL-E vs CPH6318-TL-E
Manufacturer
Series
-
-
Packaging
Bulk
Bulk
Status
Active
Active
FET Type
-
P-Channel
Technology
-
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
-
12 V
Current - Continuous Drain (Id) @ 25℃
-
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
-
Rds On (Max) @ Id, Vgs
-
34mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
-
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
22 nC @ 4.5 V
Vgs (Max)
-
?V
Input Capacitance (Ciss) (Max) @ Vds
-
1900 pF @ 6 V
FET Feature
-
-
Power Dissipation (Max)
-
1.6W (Ta)
Operating Temperature
-
150 ℃
Mounting Type
-
Surface Mount
Supplier Device Package
-
6-CPH
Package / Case
-
SOT-23-6 Thin, TSOT-23-6