Technology
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MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
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35 V
Current - Continuous Drain (Id) @ 25℃
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3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
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4V, 10V
Rds On (Max) @ Id, Vgs
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104mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs
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4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
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186 pF @ 20 V
Power Dissipation (Max)
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1W (Ta)
Operating Temperature
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150 ℃ (TJ)
Mounting Type
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Surface Mount
Supplier Device Package
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3-CPH
Package / Case
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TO-236-3, SC-59, SOT-23-3
