Technology
-
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
-
30 V
Current - Continuous Drain (Id) @ 25℃
-
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
-
50mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
-
4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
-
430 pF @ 10 V
Power Dissipation (Max)
-
1W (Ta)
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Surface Mount
Supplier Device Package
-
3-CPH
