Technology
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss)
30 V
-
Current - Continuous Drain (Id) @ 25℃
3A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
-
Rds On (Max) @ Id, Vgs
169mOhm @ 1.5A, 10V
-
Vgs(th) (Max) @ Id
2.6V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs
3.9 nC @ 10 V
-
Input Capacitance (Ciss) (Max) @ Vds
172 pF @ 10 V
-
Power Dissipation (Max)
1.6W (Ta)
-
Operating Temperature
150 ℃ (TJ)
-
Mounting Type
Surface Mount
-
Supplier Device Package
6-CPH
-
Package / Case
SOT-23-6 Thin, TSOT-23-6
-
